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Proceedings Paper

Sub-0.1-um NMOS transistors fabricated using point-source x-ray lithography
Author(s): Gee E. Rittenhouse; William M. Mansfield; Avi Kornblit; David N. Tomes; Raymond A. Cirelli; John Frackoviak; George K. Celler
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Paper Abstract

As transistor features shrink into the deep submicron range, a corresponding reduction in the optical wavelength used to pattern such features has also continued. Currently, advanced optical steppers found in ULSI production applications operate at a wavelength of 365 nm with 248 nm optical lithography present in process development facilities and 193 nm lithography in the early stages of research. By reducing the wavelength still further to below 1.5 nm, x-ray lithography represents the ultimate limit of this paradigm. In this paper we present the experimental results of the first MOSFETs ever fabricated using a laser plasma-source x-ray stepper. These transistors were patterned using a mix-and-match lithography scheme where the gate level was printed using a 1.4 nm plasma-source x-ray stepper while the other layers were patterned using an optical stepper operating at a wavelength of 248 nm (DUV). The minimum gate length of these transistors is 0.12 micrometers with an effective channel length of 75 nm.

Paper Details

Date Published: 19 May 1995
PDF: 8 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209191
Show Author Affiliations
Gee E. Rittenhouse, AT&T Bell Labs. (United States)
William M. Mansfield, AT&T Bell Labs. (United States)
Avi Kornblit, AT&T Bell Labs. (United States)
David N. Tomes, AT&T Bell Labs. (United States)
Raymond A. Cirelli, AT&T Bell Labs. (United States)
John Frackoviak, AT&T Bell Labs. (United States)
George K. Celler, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)

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