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Proceedings Paper

Ultra-submicrometer microwave GaAs MESFETs and HEMTs
Author(s): Jaeheon Han; Joseph M. Ryan; Alfred M. Kriman; David K. Ferry
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Paper Abstract

Ultra-submicron gate GaAs MESFETs and AlGaAs/GaAs HEMTs have been fabricated in an electron- beam lithographic process with gate lengths varying from 25 to 80 nm. For gate length less than 100 nm, electrical characteristics deteriorate due to fringing capacitance at a low aspect ratio. Velocity overshoot is observed for gate length shorter than about 55 nm. The maximum effective electron saturation velocity obtained is 3x107 cm/sec for a 30 nm HEMT. A maximum fT value of 167 GHz was obtained for a 37.5 nm MESFET.

Paper Details

Date Published: 1 August 1990
PDF: 8 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20919
Show Author Affiliations
Jaeheon Han, Arizona State Univ. (United States)
Joseph M. Ryan, Arizona State Univ. (United States)
Alfred M. Kriman, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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