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Proceedings Paper

Resist contrast requirement for sub-0.25-um lithography
Author(s): Jerry Z.Y. Guo; Anthony E. Novembre; Herschel M. Marchman; Joseph A. Abate; John Frackoviak; David N. Tomes; Allen G. Timko; George K. Celler
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Paper Abstract

In this paper, the effect of resist contrast on the exposure latitude, printing bias, and dark erosion are discussed in the context of proximity x-ray lithography. Positive chemically amplified resists are studied. Both experimental and simulation results show that an exposure latitude of 28% can be obtained for 0.16 micrometers dense lines and a 0.36 micrometers pitch using point source x-ray lithography with a 25 micrometers proximity gap.

Paper Details

Date Published: 19 May 1995
PDF: 8 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209180
Show Author Affiliations
Jerry Z.Y. Guo, AT&T Bell Labs. (United States)
Anthony E. Novembre, AT&T Bell Labs. (United States)
Herschel M. Marchman, AT&T Bell Labs. (United States)
Joseph A. Abate, AT&T Bell Labs. (United States)
John Frackoviak, AT&T Bell Labs. (United States)
David N. Tomes, AT&T Bell Labs. (United States)
Allen G. Timko, AT&T Bell Labs. (United States)
George K. Celler, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)

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