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Proceedings Paper

Planar-doped structures by atomic layer epitaxy
Author(s): Majid Hashemi; J. Ramdani; Brian McDermott; Kimberly G. Reid; John R. Hauser; Salah M. Bedair
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Paper Abstract

Atomic layer epitaxy (ALE) has been used for the low temperature deposition of planar-doped structures using organometallic sources, AsH3 and H2Se. Carrier concentrations in the 1019/cm3 range have been achieved, with a sharp concentration profile comparable to that reported for equivalent structures by molecular beam epitaxy (MBE). A set of planar-doped Se sheets, separated by 50 A of undoped GaAs, was used for nonalloyed contacting layers to n-GaAs films with contact resistivity in the low 10-6?cm2 range. The sidewall regrowth capability of ALE was also used in reducing the parasitic source and drain resistances by about 30%. Finally, a planar doped field effect transistor (FET) were fabricated. The performance of these ALE devices were comparable to FET devices fabricated by other growth techniques.

Paper Details

Date Published: 1 August 1990
PDF: 15 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20918
Show Author Affiliations
Majid Hashemi, North Carolina State Univ. (United States)
J. Ramdani, North Carolina State Univ. (United States)
Brian McDermott, North Carolina State Univ. (United States)
Kimberly G. Reid, North Carolina State Univ. (United States)
John R. Hauser, North Carolina State Univ. (United States)
Salah M. Bedair, North Carolina State Univ. (United States)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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