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Proceedings Paper

At-wavelength testing of optics for EUV
Author(s): Kenneth A. Goldberg; H. Raul Beguiristain; Jeffrey Bokor; Hector Medecki; Keith H. Jackson; David T. Attwood Jr.; Gary E. Sommargren; James P. Spallas; Ralph E. Hostetler
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Paper Abstract

Optical systems for extreme ultraviolet (EUV) lithography require optical elements with wavefront aberrations limited to a fraction of an EUV wavelength to achieve diffraction-limited performance. Achieving wavefront and surface figure metrology at this level of accuracy is one of the key challenges in the development of EUV lithography. We have successfully built and operated a prototype EUV point diffraction interferometer which is capable of performing wavefront measurement of EUV optical elements at their operational wavelength. Initial experiments to characterize the interferometer, and to measure the optical wavefront diffracted from a Fresnel zone plate lens are discussed.

Paper Details

Date Published: 19 May 1995
PDF: 8 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209172
Show Author Affiliations
Kenneth A. Goldberg, Lawrence Berkeley Lab. and Univ. of California/Berkeley (United States)
H. Raul Beguiristain, Lawrence Berkeley Lab. and Univ. of California/Berkeley (United States)
Jeffrey Bokor, Lawrence Berkeley Lab. and Univ. of California/Berkeley (United States)
Hector Medecki, Lawrence Berkeley Lab. (United States)
Keith H. Jackson, Lawrence Berkeley Lab. (United States)
David T. Attwood Jr., Lawrence Berkeley Lab. and Univ. of California/Berkeley (United States)
Gary E. Sommargren, Lawrence Livermore National Lab. (United States)
James P. Spallas, Lawrence Livermore National Lab. (United States)
Ralph E. Hostetler, Ray Raskin Associates (United States)


Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)

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