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Proceedings Paper

Realistic band structure models for GaAs/AlAs quantum well diodes
Author(s): Douglas R. Miller; Vijay K. Reddy; Robert L. Rogers; Dean P. Neikirk
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Paper Abstract

Three models are presented for resonant tunneling diodes (RTD). These models range in complexity from a full quantum kinetic equation based on the Crystal Wigner function approach to a simple phenomenological model based on the drift-diffusion equation. Of these three, the Crystal Wigner function has the capability of properly accounting for complex band structure transport issues within the quantum well region.

Paper Details

Date Published: 1 August 1990
PDF: 10 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20917
Show Author Affiliations
Douglas R. Miller, Univ. of Texas/Austin (United States)
Vijay K. Reddy, Univ. of Texas/Austin (United States)
Robert L. Rogers, Univ. of Texas/Austin (United States)
Dean P. Neikirk, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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