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Proceedings Paper

Resonant-tunneling diode stability and its consequences for high-frequency operation
Author(s): Curtis Kidner; Imran Mehdi; Jack R. East; George I. Haddad
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Paper Abstract

The existence of negative resistance in double barrier resonant tunneling structures has led to the proposal of various applications for these devices. For many of these applications, stability is an important consideration. This paper will discuss the effect that various device parameters have on stability and on the capability of high frequency device operation. It is concluded that the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices at microwave and millimeter-wave frequencies.

Paper Details

Date Published: 1 August 1990
PDF: 12 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20915
Show Author Affiliations
Curtis Kidner, Univ. of Michigan (United States)
Imran Mehdi, Univ. of Michigan (United States)
Jack R. East, Univ. of Michigan (United States)
George I. Haddad, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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