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Proceedings Paper

New electron optical column with large field for nanometer e-beam lithography system
Author(s): Hiroya Ohta; Takashi Matsuzaka; Norio Saitou
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Paper Abstract

An electron beam lithography system for nanometer devices has been developed. The target specifications of the system are a Gaussian beam diameter of 10 nm and a beam current of 1 nA, an acceleration voltage of 50 kV, a 500 micrometers X 500 micrometers deflection field and an overlay accuracy of 10 nm (3(sigma) ). To realize such high performance, the following two technologies have been developed for the design of the electron optical column: (1) a low aberration objective lens system with a one stage electrostatic deflector and (2) a thermal field emission (TFE) gun system with a low energy spread and a high brightness Zr/O/W cathode. The exposed results shown are a 30 nm isolated line and a 40 nm lines and spaces. An overlay accuracy of 10 nm are also obtained. This system is capable of being put into practical use in the fabrication of nanometer devices.

Paper Details

Date Published: 19 May 1995
PDF: 10 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209158
Show Author Affiliations
Hiroya Ohta, Hitachi Ltd. (Japan)
Takashi Matsuzaka, Hitachi Ltd. (Japan)
Norio Saitou, Hitachi Ltd. (Japan)


Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)

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