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Proceedings Paper

Magnification correction for proximity x-ray lithography
Author(s): Alek C. Chen; J. P. Silverman
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Paper Abstract

A magnification mismatch between exposures levels represents a significant source of potential overlay errors in proximity x-ray lithography. We describe an approach using mechanical forces applied to the x-ray mask to adjust the relative magnification of the mask and wafer. Experiments have been performed which demonstrate the potential for magnification adjustment of more than 10 ppm. In addition, finite element modeling been used to understand the experimental results and develop an optimized arrangement of forces so as to provide magnification adjustment while adding virtually no distortion.

Paper Details

Date Published: 19 May 1995
PDF: 11 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209154
Show Author Affiliations
Alek C. Chen, Loral Federal Systems Co. (United States)
J. P. Silverman, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)

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