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Proceedings Paper

Lithography for ULSI
Author(s): Shinji Okazaki
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Paper Abstract

ULSI has heavily depended on developments in optical lithography. However, optical lithography is now facing a major obstacle due to exposure wavelength limitations. to overcome this obstacle, not only the use of shorter wavelengths, but also such new technologies as superresolution techniques, electron beams, and X-ray lithography are being intensively investigated. This paper reviews recent developments in these technologies and discusses the major issues. The difference in lithographic activities between Japan and the U.S. is also discussed. Finally, recent development sin lithography for experimental 1-Gb DRAMs are presented.

Paper Details

Date Published: 19 May 1995
PDF: 15 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209152
Show Author Affiliations
Shinji Okazaki, Hitachi Ltd. (Japan)


Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)

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