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Proceedings Paper

High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system
Author(s): Elliott R. Brown; C. D. Parker; Arthur R. Calawa; M. J. Manfra; T. C. L. Gerh Sollner; Chang Lee Chen; Stella W. Pang; K. M. Molvar
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Paper Abstract

New double-barrier resonant-tunneling diodes have been fabricated in the pseudomorphic In0.53Ga0.47As/AlAs material system that have peak current densities exceeding 1x105 A cm-2 and peak-to-valley current ratios of approximately 10 at room temperature. One of these diodes yielded oscillations up to 125 GHz, but did not oscillate at higher frequencies because of a large device capacitance. A device with a much lower capacitance is estimated to have a maximum oscillation frequency of 932 GHz and a voltage rise time of 1.5 ps in switching from the peak bias point to the valley bias point. Other reported In0.53Ga0.47As/AlAs diodes are analyzed and yield theoretical maximum oscillation frequencies over 1 THz and rise times as low as 0.3 ps.

Paper Details

Date Published: 1 August 1990
PDF: 14 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20913
Show Author Affiliations
Elliott R. Brown, Lincoln Lab./MIT (United States)
C. D. Parker, Lincoln Lab./MIT (United States)
Arthur R. Calawa, Lincoln Lab./MIT (United States)
M. J. Manfra, Lincoln Lab./MIT (United States)
T. C. L. Gerh Sollner, Lincoln Lab./MIT (United States)
Chang Lee Chen, Lincoln Lab./MIT (United States)
Stella W. Pang, Lincoln Lab./MIT (United States)
K. M. Molvar, Lincoln Lab./MIT (United States)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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