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Proceedings Paper

Microwave power and efficiency performance of AlGaAs/GaAs self-aligned HBTs
Author(s): Nan Lei Wang; Neng Haung Sheng; M. F. Chang; William W. Ho; J. Aiden Higgins; Peter M. Asbeck; Gerard J. Sullivan
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Paper Abstract

The microwave power performance of AIGaAs/GaAs self-aligned HBTs from 10 to 35 GHz is described. A record value of 68% power added efficiency was obtained at 10 GHz. At 18 GHz, 16.3 dB associated gain was achieved with 1.83 W/mm power density and 40% efficiency. At 35 GHz, a I 5 dB small signal gain was observed. The tested HBTs have 2 micron feature size. Further improvement is expected with optimization of the HBT structure.

Paper Details

Date Published: 1 August 1990
PDF: 7 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20912
Show Author Affiliations
Nan Lei Wang, Rockwell International Corp. (United States)
Neng Haung Sheng, Rockwell International Corp. (United States)
M. F. Chang, Rockwell International Corp. (United States)
William W. Ho, Rockwell International Corp. (United States)
J. Aiden Higgins, Rockwell International Corp. (United States)
Peter M. Asbeck, Rockwell International Corp. (United States)
Gerard J. Sullivan, Rockwell International Corp. (United States)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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