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Proceedings Paper

AlGaAs/GaAs pnp HBTs with high fmax and ft
Author(s): Gerard J. Sullivan; M. F. Chang; Neng Haung Sheng; Robert J. Anderson; Nan Lei Wang; Keh-Chung Wang; J. Aiden Higgins; Peter M. Asbeck
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Paper Abstract

AIGaAs/GaAs Pnp HBTs have the potential for high frequency performance approaching that of Npn HBTs. To achieve this performance, it is necessary to dope the base as heavily n-type as possible. This heavy base doping results in large degeneracy in the base, which reduces the heterobarrier to reverse injection of electrons from the base into the emitter. High Al content in the emitter is desirable to maintain good injection efficiency. Incorporating a gradient in the base doping can introduce fields to sweep injected holes across the neutral base region, which reduces base transport time. DC and RF characteristics of Pnp HBTs with 40% and 75% Al in the emitter will be presented. f of 17 GHz and 1max of 39 GHz has been achieved in 2 jim x I 1 .im HBTs fabricated using a self-aligned ohmic contact process. Further improvement in performance should be possible.

Paper Details

Date Published: 1 August 1990
PDF: 7 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20911
Show Author Affiliations
Gerard J. Sullivan, Rockwell International Corp. (United States)
M. F. Chang, Rockwell International Corp. (United States)
Neng Haung Sheng, Rockwell International Corp. (United States)
Robert J. Anderson, Rockwell International Corp. (United States)
Nan Lei Wang, Rockwell International Corp. (United States)
Keh-Chung Wang, Rockwell International Corp. (United States)
J. Aiden Higgins, Rockwell International Corp. (United States)
Peter M. Asbeck, Rockwell International Corp. (United States)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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