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Proceedings Paper

Demonstration of a monolithic npn and pnp complementary HBT technology
Author(s): David B. Slater; Paul J. Enquist; Fayez E. Najjar; Mary Y. Chen; James A. Hutchby
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Paper Abstract

The monolithic integration of complementary AIGaAs/GaAs heterojunction bipolar transistors (F[BTs) has been accomplished using selective MOVPE to regrow au Npn HBT on a Pup HBT wafer. A non-self- aligned mesa process was used in 1abiicatiiig the transistors. Pnps (Npns) with a iniiiiiiiu n geometry emitter of 6tni by 12tm yielded a current gain of 300 (7.5) which was not degraded by the iegiowth process arid an f of 2.5 (22) GHz. An inverting amplifier with feedback for unity gain, a push-pull emitter follower and a complementary Gilbert Gain Cell amplifier were fabricated and tested indicating the feasibility for high speed (Al)CaAs HBT operational amplifiers (op-amps).

Paper Details

Date Published: 1 August 1990
PDF: 16 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20910
Show Author Affiliations
David B. Slater, Research Triangle Institute (United States)
Paul J. Enquist, Research Triangle Institute (United States)
Fayez E. Najjar, Research Triangle Institute (United States)
Mary Y. Chen, Research Triangle Institute (United States)
James A. Hutchby, Research Triangle Institute (United States)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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