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Proceedings Paper

Demonstration of a monolithic npn and pnp complementary HBT technology
Author(s): David B. Slater; Paul J. Enquist; Fayez E. Najjar; Mary Y. Chen; James A. Hutchby
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Paper Abstract

The monolithic integration of complementary AlGaAs/GaAs heterojunction bipolar transistors (HBTs) has been accomplished using selective MOVPE to regrow an Npn HBT on a Pnp HBT waler. A non-self- aligned mesa process was used in fabricating the transistors. Pnps (Npns) with a. minimum geometry emitter of 6?m by 12?m yielded a current gain of 300 (75) which was not degraded by the regrowth process and an ft of 2.5 (22) GHz. An inverting amplifier with feedback for unity gain, a push-pull emitter follower and a complementary Gilbert Gain Cell amplifier were fabricated and tested indicating the feasibility for high speed (Al)GaAs HBT operational amplifiers (op-amps).

Paper Details

Date Published: 1 August 1990
PDF: 16 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20910
Show Author Affiliations
David B. Slater, Research Triangle Institute (United States)
Paul J. Enquist, Research Triangle Institute (United States)
Fayez E. Najjar, Research Triangle Institute (United States)
Mary Y. Chen, Research Triangle Institute (United States)
James A. Hutchby, Research Triangle Institute (United States)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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