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Proceedings Paper

Improved AlInAs/GaInAs HBTs for high-speed circuits
Author(s): Joe E. Jensen; William E. Stanchina; Robert A. Metzger; David B. Rensch; Robert J. Ferro; P. F. Lou; M. W. Pierce; T. V. Kargodorian; Y. K. Allen
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Paper Abstract

This paper describes the demonstration of CML ring-oscillators and static frequency divider circuits implemented with AlInAs/GaInAs heterojunction bipolar transistors (HBTs) lattice matched to InP substrates. A cutoff frequency (fT) and a maximum frequency of oscillation of 90 GHz and 70 GHz, respectively, have been achieved with a 2x5-.tm2 emitter. The ring oscillators demonstrated a 15.8 ps gate delay. The divider circuits were clocked at 24.8 GHz.

Paper Details

Date Published: 1 August 1990
PDF: 12 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20907
Show Author Affiliations
Joe E. Jensen, Hughes Research Labs. (United States)
William E. Stanchina, Hughes Research Labs. (United States)
Robert A. Metzger, Hughes Research Labs. (United States)
David B. Rensch, Hughes Research Labs. (United States)
Robert J. Ferro, Hughes Research Labs. (United States)
P. F. Lou, Hughes Research Labs. (United States)
M. W. Pierce, Hughes Research Labs. (United States)
T. V. Kargodorian, Hughes Research Labs. (United States)
Y. K. Allen, Hughes Research Labs. (United States)


Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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