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Proceedings Paper

Characteristics of AlGaAs/GaAs thin-emitter heterojunction bipolar transistors
Author(s): Leda M. Lunardi; Roger J. Malik; R. W. Ryan; P. R. Smith; Stephen C. Shunk; Mark D. Feuer; Thomas R. Fullowan
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Paper Abstract

Ultra thin (100-200 Å) AlGaAs emitter layers have been incorporated in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs). Fabricated using a self-aligned process technology, this novel structure has yielded transistors with submicron emitter widths. The AlGaAs emitter layer serves to passivate the base surface resulting in constant current gain values of 25 for all geometries independent of emitter area. The maximum cutoff frequency obtained was 35 GHz with a corresponding 38 GHz for the maximum frequency of oscillation for a 1.3?m x 9 ?m emitter area device.

Paper Details

Date Published: 1 August 1990
PDF: 13 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20906
Show Author Affiliations
Leda M. Lunardi, AT&T Bell Labs. (United States)
Roger J. Malik, AT&T Bell Labs. (United States)
R. W. Ryan, AT&T Bell Labs. (United States)
P. R. Smith, AT&T Bell Labs. (United States)
Stephen C. Shunk, AT&T Bell Labs. (United States)
Mark D. Feuer, AT&T Bell Labs. (United States)
Thomas R. Fullowan, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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