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Proceedings Paper

Semiconductor diode laser coupling to integrated optics
Author(s): John L. Remo
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Paper Abstract

Semiconductor laser diode (LD) coherent light source coupling is critical to integrated optic (IO) performance. Direct external coupling of conventional (CD layer) LDs is often inefficient, introduces noise, and is generally counter to the IO micro-concept. Two options are suggested; fiber optic coupling to the IO chip aperture and integration (hybridization) of micro-LDs within the IO chip itself. Selection of the optimal LD for integration into IOs depends on a variety of parameters specific to the IO application. As an example, laboratory displacement measurements were carried out with a conventional (780 nm) edge emitting LD externally attached to an IO Michelson interferometer (IOMI) chip at the waveguide aperture. Measurement error analysis identifies errors and suggests how digital, thermal, electronic, and optical source errors can be minimized through electronic design and micro-LD components. Characteristics of LDs, VCELS and ring-laser didoes, such as threshold current, operating voltage, thermal effects, mode structure, loss mechanisms, and related coupling characteristics are compared. Recommendations for improving analog/digital conversion and software methods, as well as applications of vertical cavity surface-emitting lasers and semiconductor ring lasers coupled to IO chips are discussed.

Paper Details

Date Published: 12 May 1995
PDF: 13 pages
Proc. SPIE 2383, Micro-Optics/Micromechanics and Laser Scanning and Shaping, (12 May 1995); doi: 10.1117/12.209023
Show Author Affiliations
John L. Remo, Quantametrics Inc. (United States)


Published in SPIE Proceedings Vol. 2383:
Micro-Optics/Micromechanics and Laser Scanning and Shaping
M. Edward Motamedi; Leo Beiser, Editor(s)

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