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Proceedings Paper

Enhancing defect detection with Zernike phase contrast in EUV multilayer blank inspection
Author(s): Yow-Gwo Wang; Ryan Miyakawa; Weilun Chao; Markus Benk; Antoine Wojdyla; Alex Donoghue; David Johnson; Kenneth Goldberg; Andy Neureuther; Ted Liang; Patrick Naulleau
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Paper Abstract

In this paper, we present an experimental verification of Zernike phase contrast enhanced EUV multilayer (ML) blank defect detection using the SHARP EUV microscope. A programmed defect as small as 0.35 nm in height is detected at focus with signal to noise ratio (SNR) up to 8. Also, a direct comparison of the through-focus image behavior between bright field and Zernike phase contrast for ML defects ranging from 40 nm to 75 nm in width on the substrate is presented. Results show the advantages of using the Zernike phase contrast method even for defects with both phase and absorption components including a native defect. The impact of pupil apodization combined with Zernike phase contrast is also demonstrated, showing improved SNR is due to the stronger reduction of roughness dependent noise than defect signal, confirming our previous simulation results. Finally we directly compare Zernike phase contrast, dark field and bright field microscopes.

Paper Details

Date Published: 16 March 2015
PDF: 10 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221C (16 March 2015); doi: 10.1117/12.2087532
Show Author Affiliations
Yow-Gwo Wang, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Ryan Miyakawa, Lawrence Berkeley National Lab. (United States)
Weilun Chao, Lawrence Berkeley National Lab. (United States)
Markus Benk, Lawrence Berkeley National Lab. (United States)
Antoine Wojdyla, Lawrence Berkeley National Lab. (United States)
Alex Donoghue, Lawrence Berkeley National Lab. (United States)
David Johnson, Lawrence Berkeley National Lab. (United States)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)
Andy Neureuther, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Ted Liang, Intel Corp. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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