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Proceedings Paper

Optical transitions in Si:Ge monolayer superlattices from derivative ellipsometry spectra
Author(s): Christopher Pickering; Derek C. Houghton; Jean-Marc Baribeau
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Paper Abstract

Optical transitions in the range I .9—4.3eV have been observed in Si:Ge superlattices by spectroscopic ellipsometry (SE) and electron—beam electroreflectance (EBER). Interference is shown to play an important role in both techniques, leading to complications in • interpretation. Strong features may be produced both by multiple reflections from capping layers and from buried growth imperfections.

Paper Details

Date Published: 1 August 1990
PDF: 10 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20875
Show Author Affiliations
Christopher Pickering, Royal Signals and Radar Establishment (United Kingdom)
Derek C. Houghton, National Research Council Canada (Canada)
Jean-Marc Baribeau, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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