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Proceedings Paper

Determination of electronic structure of Ge-Si nanostructures by electroreflectance spectroscopy
Author(s): Thomas P. Pearsall
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Paper Abstract

Extensive measurements and theoretical calculations have provided strong evidence for the creation of direct bandgap superlattice structures from indirect bandgap Ge and Si. Much of the experimental evidence for this conclusion is drawn from electroreflectance measurements. Interpretation of this experiment begins with the standard lineshape fitting analysis, but it is complicated by local electric fields and interference effects. We will discuss these effects and how they can be separated from properties intrinsic to the electronic structure.

Paper Details

Date Published: 1 August 1990
PDF: 9 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20874
Show Author Affiliations
Thomas P. Pearsall, Univ. of Washington (France)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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