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Proceedings Paper

Analysis of shot noise limitations due to absorption count in EUV resists
Author(s): Suchit Bhattarai; Weilun Chao; Shaul Aloni; Andrew R. Neureuther; Patrick P. Naulleau
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Paper Abstract

Both fundamental measurements of resist exposure events and measurements of line-edge roughness for similar exposure latitude images for e-beam and EUV patterning tools have been used to assess the relative role of exposure shot-noise in lithographic performance. Electron energy loss spectroscopy (EELS) has been performed to quantify the probability of absorption of 100 keV electrons in two commercially available EUV resists. About 1/3 of the incident electrons lose at least 2 eV in the materials and this absorption probability is larger than that for EUV photons in the two modern EUV resists. Exposure event count densities between EUV and e-beam differ by 11-13%, which results in an expected difference in the variation in exposure shot noise of only 6%. With matched image exposure latitudes and accounting for EUV mask LER contribution the measured LER distributions indicate a high (76% and 94%) confidence that EUV resist performance is currently not dominated by exposure event counts for two leading chemically amplified EUV resists.

Paper Details

Date Published: 16 March 2015
PDF: 12 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942209 (16 March 2015); doi: 10.1117/12.2087303
Show Author Affiliations
Suchit Bhattarai, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Weilun Chao, Lawrence Berkeley National Lab. (United States)
Shaul Aloni, Lawrence Berkeley National Lab. (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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