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Proceedings Paper

The law of wet oxidation rate in 850nm VCSELs
Author(s): Yuan Feng; Guojun Liu; Changling Yan; Yongqin Hao; Yong Wang; Peng Lu; Yang Li; Zaijin Li
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Paper Abstract

Wet-oxidation experiments in a nitrogen environment at high temperatures are conducted to improve the photoelectricity performance of the 850nm VCSELs. It is very important to accurately control the oxidation aperture.We have carried out upon the wafer of VCSELs with the same structure by changing the furnace temperature and oxidation time, then micro-probe analyses have been examined at different oxidation depth by scanning electron microscope (SEM) and by X-ray. Oxidation products are examined at different oxidation depths of oxidation layer and each component content is analyzed, we get the law of the wet-oxidation. The oxidation process thermal stability and precision can be improved by lowering the oxidation temperature and prolonging the oxidation time.

Paper Details

Date Published: 4 March 2015
PDF: 7 pages
Proc. SPIE 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I, 95210E (4 March 2015); doi: 10.1117/12.2087296
Show Author Affiliations
Yuan Feng, Changchun Univ. of Science and Technology (China)
Guojun Liu, Changchun Univ. of Science and Technology (China)
Changling Yan, Changchun Univ. of Science and Technology (China)
Yongqin Hao, Changchun Univ. of Science and Technology (China)
Yong Wang, Changchun Univ. of Science and Technology (China)
Peng Lu, Changchun Univ. of Science and Technology (China)
Yang Li, Changchun Univ. of Science and Technology (China)
Zaijin Li, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9521:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I
Xun Hou; Zhihong Wang; Lingan Wu; Jing Ma, Editor(s)

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