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Proceedings Paper

TCAD simulations for a novel single-photon avalanche diode
Author(s): Xiangliang Jin; Jia Yang; Hongjiao Yang; Lizhen Tang; Weihui Liu
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Paper Abstract

A single-photon avalanche diode (SPAD) device with P+-SEN junction, and a low concentration of N-type doping circular virtual guard-ring was presented in this paper. SEN layer of the proposed SPAD has high concentration of N-type doping, causing the SPAD low breakdown voltage (~14.26 V). What’s more, an efficient and narrow (about 2μm) guard-ring of the proposed SPAD not only can withstand considerably higher electric fields for preventing edge breakdown, but also offers a little increment in fill factor compared with existing SPADs due to its small area. In addition, some Silvaco TCAD simulations have been done and verify characteristics and performance of the design in this work.

Paper Details

Date Published: 4 March 2015
PDF: 6 pages
Proc. SPIE 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I, 95210C (4 March 2015); doi: 10.1117/12.2087264
Show Author Affiliations
Xiangliang Jin, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics
Jia Yang, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics
Hongjiao Yang, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics
Lizhen Tang, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics
Weihui Liu, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics


Published in SPIE Proceedings Vol. 9521:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I
Xun Hou; Zhihong Wang; Lingan Wu; Jing Ma, Editor(s)

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