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Proceedings Paper

Charge transfer efficiency improvement of 4T pixel for high speed CMOS image sensor
Author(s): Xiangliang Jin; Weihui Liu; Hongjiao Yang; Lizhen Tang; Jia Yang
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Paper Abstract

The charge transfer efficiency improvement method is proposed by optimizing the electrical potential distribution along the transfer path from the PPD to the FD. In this work, we present a non-uniform doped transfer transistor channel, with the adjustments to the overlap length between the CPIA layer and the transfer gate, and the overlap length between the SEN layer and transfer gate. Theory analysis and TCAD simulation results show that the density of the residual charge reduces from 1e11 /cm3 to 1e9 /cm3, and the transfer time reduces from 500 ns to 143 ns, and the charge transfer efficiency is about 77 e-/ns. This optimizing design effectively improves the charge transfer efficiency of 4T pixel and the performance of 4T high speed CMOS image sensor.

Paper Details

Date Published: 4 March 2015
PDF: 6 pages
Proc. SPIE 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I, 95210B (4 March 2015); doi: 10.1117/12.2087262
Show Author Affiliations
Xiangliang Jin, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics
Weihui Liu, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics
Hongjiao Yang, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics
Lizhen Tang, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics
Jia Yang, Xiangtan Univ. (China)
Hunan Engineering Lab. for Microelectronics


Published in SPIE Proceedings Vol. 9521:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I
Xun Hou; Zhihong Wang; Lingan Wu; Jing Ma, Editor(s)

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