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Proceedings Paper

Development of EUV chemically amplified resist which has novel protecting group
Author(s): Shogo Matsumaru; Tatsuya Fujii; Takashi Kamizono; Kenta Suzuki; Hiroto Yamazaki; Masatoshi Arai; Yoshitaka Komuro; Akiya Kawaue; Daisuke Kawana; Taku Hirayama; Katsumi Ohmori
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Paper Abstract

Extreme Ultra Violet (EUV) Lithography is being thought to be one of the most promising candidate technologies to replace current optical lithography for the high-volume manufacturing of semiconductor devices at the 10 nm node and below. Through-put still seems to be under the target, so EUV resist materials are strongly required high resolution (R) with high sensitivity (S) and low line edge/width roughness (L). However, the chemically amplified resists should overcome RLS-trade-off. We focused on the development of EUV resist by the combination of the low activation energy protecting group (PG) and high quantum yield PAG for overcoming RLS trade-off.

Paper Details

Date Published: 20 March 2015
PDF: 9 pages
Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250U (20 March 2015); doi: 10.1117/12.2087197
Show Author Affiliations
Shogo Matsumaru, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Tatsuya Fujii, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Takashi Kamizono, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Kenta Suzuki, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hiroto Yamazaki, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Masatoshi Arai, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Yoshitaka Komuro, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Akiya Kawaue, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Daisuke Kawana, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Taku Hirayama, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Katsumi Ohmori, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 9425:
Advances in Patterning Materials and Processes XXXII
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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