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Proceedings Paper

A method of image-based aberration metrology for EUVL tools
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Paper Abstract

We present an approach to image-based EUV aberration metrology using binary mask targets and iterative model-based solutions to extract both the amplitude and phase components of the aberrated pupil function. The approach is enabled through previously developed modeling, fitting, and extraction algorithms. We examine the flexibility and criticality of the method using two experimental case studies. The first extracts the pupil phase behavior from an ASML NXE:3100 exposure system and shows primary aberration sensitivity below 0.2 mλ. The second experiment extracts both components of the pupil function from the SHARP EUV microscope.

Paper Details

Date Published: 16 March 2015
PDF: 12 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942215 (16 March 2015); doi: 10.1117/12.2087177
Show Author Affiliations
Zac Levinson, Rochester Institute of Technology (United States)
Sudharshanan Raghunathan, GLOBALFOUNDRIES Inc. (United States)
Erik Verduijn, GLOBALFOUNDRIES Inc. (United States)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Pawitter Mangat, GLOBALFOUNDRIES Inc. (United States)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)
Markus Benk, Lawrence Berkeley National Lab. (United States)
Antoine Wojdyla, Lawrence Berkeley National Lab. (United States)
Vicky Philipsen, IMEC (Belgium)
Eric Hendrickx, IMEC (Belgium)
Bruce W. Smith, Rochester Institute of Technology (United States)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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