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Proceedings Paper

RET selection on state-of-the-art NAND flash
Author(s): Neal V. Lafferty; Yuan He; Jinhua Pei; Feng Shao; QingWei Liu; Xuelong Shi
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Paper Abstract

We present results generated using a new gauge-based Resolution Enhancement Technique (RET) Selection flow during the technology set up phase of a 3x-node NAND Flash product. As a testcase, we consider a challenging critical level for this ash product. The RET solutions include inverse lithography technology (ILT) optimized masks with sub-resolution assist features (SRAF) and companion illumination sources developed using a new pixel based Source Mask Optimization (SMO) tool that uses measurement gauges as a primary input. The flow includes verification objectives which allow tolerancing of particular measurement gauges based on lithographic criteria. Relative importance for particular gauges may also be set, to aid in down-selection from several candidate sources. The end result is a sensitive, objective score of RET performance. Using these custom-defined importance metrics, decisions on the final RET style can be made in an objective way.

Paper Details

Date Published: 18 March 2015
PDF: 6 pages
Proc. SPIE 9426, Optical Microlithography XXVIII, 94260L (18 March 2015); doi: 10.1117/12.2087176
Show Author Affiliations
Neal V. Lafferty, Mentor Graphics Corp. (United States)
Yuan He, Mentor Graphics Corp. (United States)
Jinhua Pei, Semiconductor Manufacturing International Corp. (China)
Feng Shao, Mentor Graphics Corp. (China)
QingWei Liu, Semiconductor Manufacturing International Corp. (China)
Xuelong Shi, Semiconductor Manufacturing International Corp. (China)


Published in SPIE Proceedings Vol. 9426:
Optical Microlithography XXVIII
Kafai Lai; Andreas Erdmann, Editor(s)

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