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Proceedings Paper

Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL
Author(s): Changwoo Lee; Bhaskar Nagabhirava; Michael Goss; Peng Wang; Phil Friddle; Stafan Schmitz; Jian Wu; Richard Yang; Yann Mignot; Nouradine Rassoul; Bassem Hamieh; Genevieve Beique; Andre Labonte; Catherine Labelle; John Arnold; John Mucci
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Paper Abstract

As feature critical dimension (CD) shrinks towards and beyond the 7nm node, patterning techniques for optical lithography with double and triple exposure will be replaced by EUV patterning. EUV enables process and overlay improvement, as well as a potential cost reduction due to fewer wafer passes and masks required for patterning. However, the EUV lithography technique introduces newer types of resists that are thinner and softer compared to conventional 193nm resists currently being used. The main challenge is to find the key etch process parameters to improve the EUV resist selectivity, reduce LER and LWR, minimize line end shrink, improve tip-to-tip degradation, and avoid line wiggling while still enabling previous schemes such as trench-first-metal-hard-mask (TFMHM), self-aligned via (SAV) and self-aligned contact (SAC).

In this paper, we will discuss some of the approaches that we have investigated to define the best etch process adjustments to enable EUV patterning. RF pulsing is one of the key parameters utilized to overcome most of the previously described challenges, and has also been coupled with stack optimization. This study will focus on RF pulsing (high vs. low frequency results) and bias control (RF frequency dependence). In particular, pulsing effects on resist morphology, selectivity and profile management will be reported, as well as the role of aspect ratio and etch chemistry on organic mask wiggling and collapse.

This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities.

Paper Details

Date Published: 17 March 2015
PDF: 8 pages
Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280A (17 March 2015); doi: 10.1117/12.2087133
Show Author Affiliations
Changwoo Lee, Lam Research Corp. (United States)
Bhaskar Nagabhirava, Lam Research Corp. (United States)
Michael Goss, Lam Research Corp. (United States)
Peng Wang, Lam Research Corp. (United States)
Phil Friddle, Lam Research Corp. (United States)
Stafan Schmitz, Lam Research Corp. (United States)
Jian Wu, Lam Research Corp. (United States)
Richard Yang, Lam Research Corp. (United States)
Yann Mignot, STMicroelectronics (United States)
Nouradine Rassoul, STMicroelectronics (United States)
Bassem Hamieh, STMicroelectronics (United States)
Genevieve Beique, GLOBALFOUNDRIES Inc. (United States)
Andre Labonte, GLOBALFOUNDRIES Inc. (United States)
Catherine Labelle, GLOBALFOUNDRIES Inc. (United States)
John Arnold, IBM Research (United States)
John Mucci, SUNY Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 9428:
Advanced Etch Technology for Nanopatterning IV
Qinghuang Lin; Sebastian U. Engelmann; Ying Zhang, Editor(s)

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