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Proceedings Paper

Hybrid OPC flow with pattern search and replacement
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Paper Abstract

Optical Proximity Correction (OPC) is a compute-intensive process used to generate photolithography mask shapes at advanced VLSI nodes. Previously, we reported a modified two-step OPC flow which consists of a first pattern replacement step followed by a model based OPC correction step [1]. We build on this previous work and show how this hybrid flow not only improves full chip OPC runtime, but also significantly improves mask correction consistency and overall mask quality. This is demonstrated using a design from the 20nm node, which requires the use of model based SRAF followed by model based OPC to obtain the full mask solution.

Paper Details

Date Published: 18 March 2015
PDF: 8 pages
Proc. SPIE 9426, Optical Microlithography XXVIII, 942611 (18 March 2015); doi: 10.1117/12.2087094
Show Author Affiliations
Piyush Verma, GLOBALFOUNDRIES Inc. (United States)
Shikha Somani, GLOBALFOUNDRIES Inc. (United States)
Yang Y. Ping, GLOBALFOUNDRIES Inc. (United States)
Piyush Pathak, GLOBALFOUNDRIES Inc. (United States)
Rani S. Ghaida, GLOBALFOUNDRIES Inc. (United States)
Carl P. Babcock, GLOBALFOUNDRIES Inc. (United States)
Fadi Batarseh, GLOBALFOUNDRIES Inc. (United States)
Jingyu Wang, GLOBALFOUNDRIES Inc. (United States)
Sriram Madhavan, GLOBALFOUNDRIES Inc. (United States)
Sarah McGowan, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 9426:
Optical Microlithography XXVIII
Kafai Lai; Andreas Erdmann, Editor(s)

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