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Proceedings Paper

Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement
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Paper Abstract

Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL mask blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.

Paper Details

Date Published: 16 March 2015
PDF: 12 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220J (16 March 2015); doi: 10.1117/12.2087041
Show Author Affiliations
Pei-Yang Yan, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)
Ken A. Goldberg, Lawrence Berkeley National Lab. (United States)
Markus P. Benk, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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