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Proceedings Paper

Photoreflectance of GaAs/Ga1-xAlxAs heterojunction bipolar transistor structures
Author(s): X. Yin; Fred H. Pollak; L. Pawlowicz; Thomas J. O'Neill; M. E. Hafizi
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Paper Abstract

We have studied the photoreflectance spectra at 300 K from a number of GaAs/Ga1AlAs heterojunction bipolar transistor (HBT) structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition. From the observed Franz-Keldysh oscillations we have been able to evaluate the built-in dc electric fields, F , in the Ga Al As emitter as well as the n GaAs collector region. In dc 1-x x addition, the Ga1AlAs band gap (and hence Al composition) has been determined. The obtained values of Fd are in good agreement with numerically-computed values for the analyzed HBT structures, thus making it possible to deduce doping levels in these structures. The GaAlAs FKO have been correlated with device performance.

Paper Details

Date Published: 1 August 1990
PDF: 10 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20870
Show Author Affiliations
X. Yin, Brooklyn College/CUNY (United States)
Fred H. Pollak, Brooklyn College/CUNY (United States)
L. Pawlowicz, TRW, Inc. (United States)
Thomas J. O'Neill, TRW, Inc. (United States)
M. E. Hafizi, TRW, Inc. (United States)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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