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Proceedings Paper

DSA planarization approach to solve pattern density issue
Author(s): P. Pimenta Barros; A. Gharbi; Aurélien Sarrazin; R. Tiron; N. Posseme; S. Barnola; S. Bos; C. Tallaron; G. Claveau; X. Chevalier; M. Argoud; Isabelle Servin; C. Navarro; Célia Nicolet; C. Lapeyre; C. Monget
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Paper Abstract

Directed Self-Assembly (DSA) of Block Copolymers (BCP) is one of the most promising solutions for sub-10 nm nodes. However, some challenges need to be addressed for a complete adoption of DSA in manufacturing such as achieving DSA-friendly design, low defectivity and accurate pattern placement. In this paper, we propose to discuss the DSA integration flows using graphoepitaxy for contact-hole patterning application. DSA process dependence on guiding pattern density has been studied and solved thanks to a new approach called “DSA planarization”. The capabilities of this new approach have been evaluated in terms of defectivity, Critical Dimension (CD) control and uniformity before and after DSA etching transfer.

Paper Details

Date Published: 17 March 2015
PDF: 10 pages
Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280D (17 March 2015); doi: 10.1117/12.2086810
Show Author Affiliations
P. Pimenta Barros, CEA-LETI (France)
A. Gharbi, CEA-LETI (France)
Aurélien Sarrazin, CEA-LETI (France)
R. Tiron, CEA-LETI (France)
N. Posseme, CEA-LETI (France)
S. Barnola, CEA-LETI (France)
S. Bos, CEA-LETI (France)
C. Tallaron, CEA-LETI (France)
G. Claveau, CEA-LETI (France)
X. Chevalier, Arkema France (France)
M. Argoud, CEA-LETI (France)
Isabelle Servin, CEA-LETI (France)
C. Navarro, Arkema France (France)
Célia Nicolet, Arkema S.A. (France)
C. Lapeyre, CEA-LETI (France)
C. Monget, STMicroelectronics (France)


Published in SPIE Proceedings Vol. 9428:
Advanced Etch Technology for Nanopatterning IV
Qinghuang Lin; Sebastian U. Engelmann; Ying Zhang, Editor(s)

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