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Proceedings Paper

Dynamic Stark effect in semiconductors: high-speed modulation
Author(s): Nasser Peyghambarian; Stephan W. Koch; Bernhard O. Seraphin
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Paper Abstract

Laser excitation above the bandgap of semiconductor materials like GaAs creates a high density of electrons and holes. These quasi particles form a quantum mechanical system in which optical nonlinearities arise as a result of many-body effects such as screening of the Coulomb potential, reduction of the bandgap, and filling of the band and of the states.' The refractive index change resulting from such processes may be employed to demonstrate a variety of devices such as nonlinear switches, modulators, and logic gates. These optical nonlinearities may be measured using various techniques such as four-wave mixing, interferometry, and modulation spectroscopy. In the latter technique, an analogy is established to the electroreflectance effect2'3 in which the optical properties of a semiconductor are modulated by the application of a low-frequency electric field. In the experiment reported here, the modulating element is the E-field of the pump beam. At a much higher frequency than in electroreflectance spectroscopy, the pump beam thus produces field-induced reflectance and transmittance changes from which the refractive index change is obtained.

Paper Details

Date Published: 1 August 1990
PDF: 5 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20868
Show Author Affiliations
Nasser Peyghambarian, Optical Sciences Ctr./Univ. of (United States)
Stephan W. Koch, Optical Sciences Ctr./Univ. of (Germany)
Bernhard O. Seraphin, Optical Sciences Ctr./Univ. of (United States)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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