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Proceedings Paper

Photoreflectance of doped GaAs beyond the band gap
Author(s): Alireza Badakhshan; Robert Glosser; Steve Lambert
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Paper Abstract

We report photoreflectance studies ofMOCVD grown doped GaAs at the higher energy transition E1( 2.9 eV). We are especially interested in the variation ofboth the energy position and the broadening parameter F of the E1 transition with doping concentration. Above 1 x 10'8cin3 for Si:GaAs and ' 7 X 1018 for Zn:GaAs, we observe an increasing overlap of B1 and E1 + Li structures. Evaluation of r based on curve fitting of the KramersKronig analysed data shows a nearly linear relation between F and the logarithm of carrier concentration. This observation has potential application in the determination of carrier concentration for heavily doped films.

Paper Details

Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20867
Show Author Affiliations
Alireza Badakhshan, Univ. of Texas/Dallas (United States)
Robert Glosser, Univ. of Texas/Dallas (United States)
Steve Lambert, VARO, Inc. (United States)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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