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Proceedings Paper

Graphoepitaxial and chemoepitaxial methods for creating line-space patterns at 33nm pitch: comparison to a HVM process
Author(s): Dan B. Millward; Gurpreet S. Lugani; Scott L. Light; Ardavan Niroomand; Phillip D. Hustad; Peter Trefonas; Dung Quach; Valeriy V. Ginzburg
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Paper Abstract

Block copolymer directed self-assembly (BCP-DSA) may provide a less costly method of forming sub-38nm pitch line-space patterns relative to proven HVM methods, but DSA needs to provide equivalent or improved defect density and pattern quality to warrant consideration for displacing current HVM methods. This paper evaluates the process constraints of three DSA flows and compares the pattern quality after pattern transfer for each flow at its optimal process conditions to the same pattern created by a proven HVM process flow.

Paper Details

Date Published: 19 March 2015
PDF: 12 pages
Proc. SPIE 9423, Alternative Lithographic Technologies VII, 942304 (19 March 2015); doi: 10.1117/12.2086693
Show Author Affiliations
Dan B. Millward, Micron Technology, Inc. (United States)
Gurpreet S. Lugani, Micron Technology, Inc. (United States)
Scott L. Light, Micron Technology, Inc. (United States)
Ardavan Niroomand, Micron Technology, Inc. (Belgium)
Phillip D. Hustad, Dow Electronic Materials (United States)
Peter Trefonas, Dow Electronic Materials (United States)
Dung Quach, Dow Electronic Materials (United States)
Valeriy V. Ginzburg, The Dow Chemical Co. (United States)


Published in SPIE Proceedings Vol. 9423:
Alternative Lithographic Technologies VII
Douglas J. Resnick; Christopher Bencher, Editor(s)

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