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Proceedings Paper

Low-LER tin carboxylate photoresists using EUV
Author(s): Ryan Del Re; Miriam Sortland; James Pasarelli; Brian Cardineau; Yasin Ekinci; Michaela Vockenhuber; Mark Neisser; Daniel Freedman; Robert L. Brainard
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Paper Abstract

Pure thin films of organotin compounds have been lithographically evaluated using extreme ultraviolet lithography (EUVL, 13.5 nm). Twenty-one compounds of the type R2Sn(O2CR’)2 were spin-coated from solutions in toluene, exposed to EUV light, and developed in organic solvents. Exposures produced negative-tone contrast curves and dense-line patterns using interference lithography. Contrast-curve studies indicated that the Emax values were linearly related to molecular weight when plotted separately depending upon the hydrocarbon group bound directly to tin (R = butyl, phenyl and benzyl). Additionally, Emax was found to be linearly related to free radical stability of the hydrocarbon group bound directly to tin. Dense-line patterning capabilities varied, but two resists in particular show exceptionally good line edge roughness (LER). A resist composed of an amorphous film of (C6H5CH2)2Sn(O2CC(CH3)3)2 (13) achieved 1.4 nm LER at 22 nm half-pitch patterning and a resist composed of (C6H5CH2)2Sn(O2CC6H5)2 (14) achieved 1.1 nm LER at 35 nm half-pitch at high exposure doses (600 mJ/cm2). Two photoresists that use olefin-based carboxylates, (C6H5CH2)2Sn(O2CCH=CH2)2 (11) and (C6H5CH2)2Sn(O2CC(CH3)=CH2)2 (12), demonstrated much improved photospeeds (5 mJ/ cm2 and 27 mJ/cm2) but with worse LER.

Paper Details

Date Published: 19 March 2015
PDF: 10 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942221 (19 March 2015); doi: 10.1117/12.2086597
Show Author Affiliations
Ryan Del Re, College of Nanoscale Science and Engineering (United States)
Miriam Sortland, College of Nanoscale Science and Engineering (United States)
James Pasarelli, College of Nanoscale Science and Engineering (United States)
Brian Cardineau, SUNY College of Nanoscale Science and Engineering (United States)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institute (Switzerland)
Mark Neisser, SEMATECH Inc. (United States)
Daniel Freedman, State Univ. of New York at New Paltz (United States)
Robert L. Brainard, College of Nanoscale Science and Engineering (United States)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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