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Proceedings Paper

Photoreflectance characterization of delta-doped p-GaAs
Author(s): Ayrton Andre Bernussi; F. Iikawa; Paulo Motisuke; Pierre Basmaji; M. Siu Li; Oscar Hipolito
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Paper Abstract

Silicon S-doped GaAs samples grown by molecular-beam epitaxy with different dopant concentration and cap layer thickness were investigated by photoreflectance spectroscopy. The features observed above the GaAs fundamental energy gap are temptatively attributed to transitions involving continuous valence band states and quantum- confined states at the conduction band. These interband transition energies are in qualitative agreement with the self -consistent ones calculated taking into account the spreading of dopants.

Paper Details

Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20864
Show Author Affiliations
Ayrton Andre Bernussi, Telecomunicacoes Brasileiras SA (Brazil)
F. Iikawa, Univ. Estadual de Campinas (Brazil)
Paulo Motisuke, Univ. Estadual de Campinas (Brazil)
Pierre Basmaji, Univ. de Sao Paulo (Brazil)
M. Siu Li, Univ. de Sao Paulo (Brazil)
Oscar Hipolito, Univ. de Sao Paulo (Brazil)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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