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Proceedings Paper

Photoreflectance of GaAs/AlGaAs hetero n-i-p-i structures
Author(s): Ulrich D. Keil; Michael Forkel; Norbert Linder; Klaus H. Schmidt; Gottfried H. Doehler; Jeffrey N. Miller
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Paper Abstract

We report results of photoreflectance (PR) investigations of GaAs/Alo.3Gao.7As hetero-n-i-p-i crystals with either GaAs-QWs ("type II") in the intrinsic region or GaAs-QWs interspersed in the n-region ("type I"). To understand the complex PR-spectra of these samples we changed several measurement parameters such as ac-pump-intensity, dc-pump-intensity, pump frequency and temperature. Especially the spectra of type II showed a strong temperature dependence. We compare these spectra to spectra calculated with the model of an infinite quantum well in an electric field. Because of the dielectric function being periodic in space the z-dependence of the dielectric function is taken into account.

Paper Details

Date Published: 1 August 1990
PDF: 9 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20863
Show Author Affiliations
Ulrich D. Keil, Univ. of Erlangen-Nuernberg (Denmark)
Michael Forkel, Univ. of Erlangen-Nuernberg (Germany)
Norbert Linder, Univ. of Erlangen-Nuernberg (Germany)
Klaus H. Schmidt, Univ. of Erlangen-Nuernberg (Germany)
Gottfried H. Doehler, Univ. of Erlangen-Nuernberg (Germany)
Jeffrey N. Miller, Hewlett-Packard Labs. (United States)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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