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Extending resolution limits of EUV resist materials
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Paper Abstract

Extreme ultraviolet lithography (EUVL) technology continues to progress and remains a viable candidate for next generation lithography1, which drives the need for EUV resists capable of high resolution with high sensitivity and low LWR. While chemically amplified resists (CARs) have demonstrated the ability to pattern 12nm half-pitch features2, pattern collapse continues to limit their ultimate resolution. We have taken multiple approaches to extend resist capabilities past these limits. Recent results in pattern collapse mitigation using a resist encapsulation and etch back strategy will be discussed. We continue to investigate EUV patterning of semi-inorganic resists to simultaneously increase EUV photon absorption and extend mechanical strength beyond CAR capabilities. The limitations of metal oxide-based nanoparticle photoresists have been investigated, and have provided key insights to further understanding the mechanism of this class of materials.

Paper Details

Date Published: 19 March 2015
PDF: 8 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942205 (19 March 2015); doi: 10.1117/12.2086276
Show Author Affiliations
Marie Krysak, Intel Corp. (United States)
Michael Leeson, Intel Corp. (United States)
Eungnak Han, Intel Corp. (United States)
James Blackwell, Intel Corp. (United States)
Shane Harlson, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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