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Proceedings Paper

Evidence for new optical transitions in short-period Si/Ge superlattices from electron-beam electroreflectance measurements
Author(s): Michael A. Gell; Michael H. Herman; Kimberley Elcess; I. Dd. Ward; C. J. Gibbings; C. G. Tuppen
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Paper Abstract

An electroreflectance study of several short-period Si/Ge superlattices and SiGe alloy layers grown by molecular beam epitaxy has been performed. Contactless Electron Beam Electroreflectance (EBER) measurements taken at 120K provide clear evidence of superlattice transitions. Comparisons between EBER spectra from sequentially stripped samples reveal superlattice transitions accompanied by those related to the substrate material and buffer layers. Results from the EBER measurements are compared with predictions from empirical pseudopotential calculations. The experimental features support the theoretical predictions.

Paper Details

Date Published: 1 August 1990
PDF: 9 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20861
Show Author Affiliations
Michael A. Gell, British Telecommunications Research Labs. (United Kingdom)
Michael H. Herman, Charles Evans & Associates (United States)
Kimberley Elcess, Charles Evans & Associates (United States)
I. Dd. Ward, Charles Evans & Associates (United States)
C. J. Gibbings, British Telecommunications Research Labs. (United Kingdom)
C. G. Tuppen, British Telecommunications Research Labs. (United Kingdom)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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