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Proceedings Paper

Multi-stack extreme-ultraviolet pellicle with out-of-band reduction
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Paper Abstract

The out-of-band (OoB) radiation that can cause serious aerial image deformation on the wafer is reported. In order to check the maximum allowable OoB radiation reflectivity at the extreme ultra-violet (EUV) pellicle, we simulated the effect of OoB radiation and found that the maximum allowable OoB radiation reflectivity at the pellicle should be smaller than 15 % which satisfy our criteria such as aerial image critical dimension (CD), contrast, and normalized image log slope (NILS). We suggested a new multi-stack EUV pellicle that can have high EUV transmission, minimal OoB radiation reflectivity, and enough deep ultra-violet transmission for inspection and alignment of the mask through the EUV pellicle.

Paper Details

Date Published: 19 March 2015
PDF: 11 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221O (19 March 2015); doi: 10.1117/12.2086052
Show Author Affiliations
Sung-Gyu Lee, Hanyang Univ. (Korea, Republic of)
Guk-Jin Kim, Hanyang Univ. (Korea, Republic of)
In-Seon Kim, Hanyang Univ. (Korea, Republic of)
Jin-Ho Ahn, Hanyang Univ. (Korea, Republic of)
Jin-Goo Park, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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