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Proceedings Paper

Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives
Author(s): Prashant Kulshreshtha; Ken Maruyama; Scott Dhuey; Dominik Ziegler; Weilun Chao; Paul Ashby; Deirdre Olynick
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Paper Abstract

One of the key challenges to high resolution resist patterning is probing the resist properties at length scales commensurate with the pattern size. Using a new scanning probe microscopy (SPM), Peak Force™ tapping, we map exposure dependent nanoscale modulus of the exposed/developed resist patterns with sub-10 nm resolution. By innovative electron beam exposure pattern design, the SPM technique reveals that resist modulus follows the height contrast profile, but with a shift to higher exposure doses. SEM image analysis of patterned resist structures confirm that the best line-space patterns are achieved at exposure dose where modulus reaches its maximum and shows how modulus can be used to probe patternability of resist systems.

Paper Details

Date Published: 20 March 2015
PDF: 11 pages
Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250I (20 March 2015); doi: 10.1117/12.2086045
Show Author Affiliations
Prashant Kulshreshtha, Lawrence Berkeley National Lab. (United States)
Ken Maruyama, JSR Mirco, Inc. (United States)
Scott Dhuey, Lawrence Berkeley National Lab. (United States)
Dominik Ziegler, Lawrence Berkeley National Lab. (United States)
Weilun Chao, Lawrence Berkeley National Lab. (United States)
Paul Ashby, Lawrence Berkeley National Lab. (United States)
Deirdre Olynick, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 9425:
Advances in Patterning Materials and Processes XXXII
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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