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Proceedings Paper

Effect of molecular resist structure on glass transition temperature and lithographic performance in epoxide functionalized negative tone resists
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Paper Abstract

A series of five negative tone epoxide functionalized molecular resists have been synthesized and have had their glass transition temperature (Tg) and lithographic contrast behavior characterized. Introducing rigid structural features in the form of aromatic rings to a resist was found to increase its glass transition temperature. All resists but one, BHPF-2Ep, were found to have poor film stability which required the use of an underlayer. A trend was observed where PEB conditions performed at temperatures much higher than the Tg of the molecular resist was found to induce propagation of polymerization outside of exposed regions. Di-functionalized resists were observed to have poor sensitivity due to their low degree of functionalization. A resist was synthesized (BHPF-2Ep) which was capable of resolving features down to 20 nm with an imaging dose of 70.5 mJ/cm2.

Paper Details

Date Published: 20 March 2015
PDF: 8 pages
Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250C (20 March 2015); doi: 10.1117/12.2086027
Show Author Affiliations
Hannah Narcross, Georgia Institute of Technology (United States)
Richard A Lawson, Georgia Institute of Technology (United States)
Brandon Sharp, Georgia Institute of Technology (United States)
Jun Sung Chun, SEMATECH Inc. (United States)
SUNY Polytechnic Institute (United States)
Mark Neisser, SEMATECH Inc. (United States)
Laren M. Tolbert, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9425:
Advances in Patterning Materials and Processes XXXII
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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