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Proceedings Paper

Integrated fab process for metal oxide EUV photoresist
Author(s): Andrew Grenville; Jeremy T. Anderson; Benjamin L. Clark; Peter De Schepper; Joseph Edson; Michael Greer; Kai Jiang; Michael Kocsis; Stephen T. Meyers; Jason K. Stowers; Alan J. Telecky; Danilo De Simone; Geert Vandenberghe
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Paper Abstract

Inpria is developing directly patternable, metal oxide hardmasks as robust, high-resolution photoresists for EUV lithography. Targeted formulations have achieved 13nm half-pitch at 35 mJ/cm2 on an ASML’s NXE:3300B scanner. Inpria’s second-generation materials have an absorbance of 20/μm, thereby enabling an equivalent photon shot noise compared to conventional resists at a dose lower by a factor of 4X. These photoresists have ~40:1 etch selectivity into a typical carbon underlayer, so ultrathin 20nm films are possible, mitigating pattern collapse. In addition to lithographic performance, we review progress in parallel advances required to enable the transition from lab to fab for such a metal oxide photoresist. This includes considerations and data related to: solvent compatibility, metals cross-contamination, coat uniformity, stability, outgassing, and rework.

Paper Details

Date Published: 20 March 2015
PDF: 8 pages
Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250S (20 March 2015); doi: 10.1117/12.2086006
Show Author Affiliations
Andrew Grenville, Inpria Corp. (United States)
Jeremy T. Anderson, Inpria Corp. (United States)
Benjamin L. Clark, Inpria Corp. (United States)
Peter De Schepper, Inpria Corp. (United States)
Joseph Edson, Inpria Corp. (United States)
Michael Greer, Inpria Corp. (United States)
Kai Jiang, Inpria Corp. (United States)
Michael Kocsis, Inpria Corp. (United States)
Stephen T. Meyers, Inpria Corp. (United States)
Jason K. Stowers, Inpria Corp. (United States)
Alan J. Telecky, Inpria Corp. (United States)
Danilo De Simone, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)


Published in SPIE Proceedings Vol. 9425:
Advances in Patterning Materials and Processes XXXII
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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