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Proceedings Paper

Electronic transitions in a Ge-rich strain-symmetrized Si8Ge32 superlattice measured by photoreflectance spectroscopy
Author(s): Philip A. Dafesh; Kang Lung Wang
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Paper Abstract

Using photoreflectance spectroscopy, fifteen electronic transitions have been measured from a 60 period Si8Ge32 superlattice grown on a Si02Ge0•8 buffer layer on < 100 > Si. The superlattice transitions fit well to a third derivative functional form and most of their energies were determined using a one band envelope-function model, including strain effects. The temperature dependences of the E0 transition in bulk Ge and in the Si8Ge32 superlattice were also fit to a nonlinear functional form.

Paper Details

Date Published: 1 August 1990
PDF: 12 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20860
Show Author Affiliations
Philip A. Dafesh, Univ. of California/Los Angele (United States)
Kang Lung Wang, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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