Share Email Print
cover

Proceedings Paper

Coater/developer process integration of metal-oxide based photoresist
Author(s): Benjamin L. Clark; Michael Kocsis; Michael Greer; Andrew Grenville; Takashi Saito; Lior Huli; Richard Farrell; David Hetzer; Shan Hu; Hiroie Matsumoto; Andrew Metz; Shinchiro Kawakami; Koichi Matsunaga; Masashi Enomoto; Jeffrey Lauerhaas; Anthony Ratkovich; David DeKraker
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Inpria is pioneering a novel approach to EUV photoresist. Directly patternable metal oxide thin films have shown resolution better than 10nm half-pitch, with robust etch resistance, and efficient use of photons through high EUV absorbance. Inpria’s Gen2 photoresists are cast from commonly used organic coating solvents and are developed in typical negative tone develop (NTD) organic solvents. This renders them compatible with CLEAN TRACK LITHIUS Pro-EUV coater/developer system (Tokyo Electron Limited; TEL) and solvent drains. The presence of metal in the photoresist demands additional scrutiny and process development to minimize contamination risks to other tools and wafers. In this paper, we review progress in developing coat processes that reduce metal contamination levels below typical industry levels. We demonstrate minimization of trace metals contamination from wafer-to-coater/developer, and wafer-to-wafer from the spin coat process. This will also include results from surface analyses of frontside edge exclusion and backside of wafer using best-known analytical methods. In addition, we discuss results of coat uniformity and defectivity optimization. Wet clean compatibility and dry etch rate by using conventional Si-ARC/OPL etching recipe will also be presented. In conjunction with this work, we identify potential contamination pathways and means for managing contamination risk. We furthermore review equipment compatibility issues for using Inpria’s metal oxide photoresists.

Paper Details

Date Published: 20 March 2015
PDF: 7 pages
Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251A (20 March 2015); doi: 10.1117/12.2085982
Show Author Affiliations
Benjamin L. Clark, Inpria Corp. (United States)
Michael Kocsis, Inpria Corp. (United States)
Michael Greer, Inpria Corp. (United States)
Andrew Grenville, Inpria Corp. (United States)
Takashi Saito, TEL Technology Ctr., America, LLC (United States)
Lior Huli, TEL Technology Ctr., America, LLC (United States)
Richard Farrell, TEL Technology Ctr., America, LLC (United States)
David Hetzer, TEL Technology Ctr., America, LLC (United States)
Shan Hu, TEL Technology Ctr., America, LLC (United States)
Hiroie Matsumoto, TEL Technology Ctr., America, LLC (United States)
Andrew Metz, TEL Technology Ctr., America, LLC (United States)
Shinchiro Kawakami, Tokyo Electron Kyushu Ltd. (Japan)
Koichi Matsunaga, Tokyo Electron Kyushu Ltd. (Japan)
Masashi Enomoto, Tokyo Electron Kyushu Ltd. (Japan)
Jeffrey Lauerhaas, TEL FSI, Inc. (United States)
Anthony Ratkovich, TEL FSI, Inc. (United States)
David DeKraker, TEL FSI, Inc. (United States)


Published in SPIE Proceedings Vol. 9425:
Advances in Patterning Materials and Processes XXXII
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

© SPIE. Terms of Use
Back to Top