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Proceedings Paper

Toward 10nm half-pitch in EUV lithography: results on resist screening and pattern collapse mitigation techniques
Author(s): Tero S. Kulmala; Michaela Vockenhuber; Elizabeth Buitrago; Roberto Fallica; Yasin Ekinci
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Paper Abstract

Extreme ultraviolet lithography (EUVL) is considered to be the most promising option to continue with the aggressive scaling required in high-volume manufacturing (HVM) of integrated circuits. One of the main challenges, however, is the development of EUV resists that fulfill the strict sensitivity, resolution, and line-edge roughness specifications of future nodes. Here, we present our EUV resist screening results of a wide range of EUV resists in their developmental phase from our collaborators from around the world. Furthermore, we have carried out extensive experiments to improve the processing parameters of the resists as well as to identify the optimal wafer pre-treatment methods in order to optimize the adhesion of the resist to the substrate. We show that even though significant improvements in performance of chemically amplified resists have been achieved, pattern collapse is still the major process-limiting factor as the resolution decreases below 14 nm half-pitch (HP).

Paper Details

Date Published: 6 April 2015
PDF: 12 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942204 (6 April 2015); doi: 10.1117/12.2085936
Show Author Affiliations
Tero S. Kulmala, Paul Scherrer Institut (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institut (Switzerland)
Elizabeth Buitrago, Paul Scherrer Institut (Switzerland)
Roberto Fallica, Paul Scherrer Institut (Switzerland)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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