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Proceedings Paper

Performance overview and outlook of EUV lithography systems
Author(s): Alberto Pirati; Rudy Peeters; Daniel Smith; Sjoerd Lok; Arthur W. E. Minnaert; Martijn van Noordenburg; Jörg Mallmann; Noreen Harned; Judon Stoeldraijer; Christian Wagner; Carmen Zoldesi; Eelco van Setten; Jo Finders; Koen de Peuter; Chris de Ruijter; Milos Popadic; Roger Huang; Martin Lin; Frank Chuang; Roderik van Es; Marcel Beckers; David Brandt; Nigel Farrar; Alex Schafgans; Daniel Brown; Herman Boom; Hans Meiling; Ron Kool
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Paper Abstract

Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm for 16nm dense lines and 1.1 nm for 20nm isolated space and stable matched overlay performance with ArF immersion scanner of less than 4nm provide the required lithographic performance for these device development activities. Steady progresses in source power have been achieved in the last 12 months, with 100Watts (W) EUV power capability demonstrated on multiple machines. Power levels up to 90W have been achieved on a customer machine, while 110W capability has been demonstrated in the ASML factory. Most NXE:3300 installed at customers have demonstrated the capability to expose 500 wafers per day, and one field system upgraded to the 80W configuration has proven capable of exposing 1,000 wafers per day. Scanner defectivity keeps being reduced by a 10x factor each year, while the first exposures obtained with full size EUV pellicles show no appreciable difference in CDU when compared to exposures done without pellicle. The 4th generation EUV system, the NXE: 3350, is being qualified in the ASML factory.

Paper Details

Date Published: 13 March 2015
PDF: 18 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221P (13 March 2015); doi: 10.1117/12.2085912
Show Author Affiliations
Alberto Pirati, ASML Netherlands B.V. (Netherlands)
Rudy Peeters, ASML Netherlands B.V. (Netherlands)
Daniel Smith, ASML Netherlands B.V. (Netherlands)
Sjoerd Lok, ASML Netherlands B.V. (Netherlands)
Arthur W. E. Minnaert, ASML Netherlands B.V. (Netherlands)
Martijn van Noordenburg, ASML Netherlands B.V. (Netherlands)
Jörg Mallmann, ASML Netherlands B.V. (Netherlands)
Noreen Harned, ASML Netherlands B.V. (United States)
Judon Stoeldraijer, ASML Netherlands B.V. (Netherlands)
Christian Wagner, ASML Netherlands B.V. (Netherlands)
Carmen Zoldesi, ASML Netherlands BV (Netherlands)
Eelco van Setten, ASML Netherlands BV (Netherlands)
Jo Finders, ASML Netherlands BV (Netherlands)
Koen de Peuter, ASML Netherlands B.V. (Netherlands)
Chris de Ruijter, ASML Netherlands B.V. (Netherlands)
Milos Popadic, ASML Netherlands B.V. (Netherlands)
Roger Huang, ASML Netherlands B.V. (Netherlands)
Martin Lin, ASML Netherlands B.V. (Netherlands)
Frank Chuang, ASML Netherlands B.V. (Netherlands)
Roderik van Es, ASML Netherlands B.V. (Netherlands)
Marcel Beckers, ASML Netherlands B.V. (Netherlands)
David Brandt, Cymer LLC (United States)
Nigel Farrar, Cymer LLC (United States)
Alex Schafgans, Cymer LLC (United States)
Daniel Brown, Cymer LLC (United States)
Herman Boom, ASML Netherlands B.V. (Netherlands)
Hans Meiling, ASML Netherlands B.V. (Netherlands)
Ron Kool, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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