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Proceedings Paper

"Fast" and "thick" e-beam resists exposed with multi-beam tool at 5 keV for implants and mature nodes: experimental and simulated model study
Author(s): Aurélien Fay; Ndeye Arame Thiam; Marie-Laure Cordini; Isabelle Servin; Christophe Constancias; Ludovic Lattard; Laurent Pain
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Paper Abstract

In addition to sub-20 nm technology nodes, multi-beam lithography at low-energy has also the capability to address mature CMOS technologies [130-45nm nodes] with high throughput and significant manufacturing costs reduction. It requires both “fast” resists for throughput gain and cost of ownership and “thick” resists matched with the current post-lithography processes such as etching and implant steps. We successfully demonstrated patterning of 45-130 nm nodes structures on different thick resists (up to 160 nm) with a 5 keV Mapper pre-alpha tool. In parallel, we developed a theoretical model to simulate 3D patterning showing good agreement with our experimental results.

Paper Details

Date Published: 19 March 2015
PDF: 15 pages
Proc. SPIE 9423, Alternative Lithographic Technologies VII, 94231Q (19 March 2015); doi: 10.1117/12.2085832
Show Author Affiliations
Aurélien Fay, CEA-LETI (France)
Ndeye Arame Thiam, CEA-LETI (France)
Marie-Laure Cordini, STMicroelectronics (France)
Isabelle Servin, CEA-LETI (France)
Christophe Constancias, CEA-LETI (France)
Ludovic Lattard, CEA-LETI (France)
Laurent Pain, CEA-LETI (France)

Published in SPIE Proceedings Vol. 9423:
Alternative Lithographic Technologies VII
Douglas J. Resnick; Christopher Bencher, Editor(s)

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