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Proceedings Paper

Fabrication of functional electromechanical nanowire resonators by focused ion-beam (FIB) implantation
Author(s): J. Llobet; M. Sansa; X. Borrisé; F. Pérez-Murano; M. Gerbolés
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Paper Abstract

By the combination of focused ion beam (FIB) local gallium implantation and selective silicon etching and diffusive boron doping it is presented a fast and flexible fabrication method that allows the creation of silicon structures of various geometries. The structures obtained by this resistless approach are electrically conductive. Free suspended mechanical resonators of different dimensions and geometries had been fabricated and measured. The resulting devices present a good electrical conductivity which is employed to characterize their high frequency mechanical response by electrical methods. Combining this method with other fabrication approaches it is feasible to fabricate singular devices adapted to specific applications.

Paper Details

Date Published: 19 March 2015
PDF: 7 pages
Proc. SPIE 9423, Alternative Lithographic Technologies VII, 94230K (19 March 2015); doi: 10.1117/12.2085818
Show Author Affiliations
J. Llobet, Ctr. Nacional de Microelectrónica (Spain)
M. Sansa, Ctr. Nacional de Microelectrónica (Spain)
X. Borrisé, Institut Català de Nanociència i Nanotecnologia (Spain)
F. Pérez-Murano, Ctr. Nacional de Microelectrónica (Spain)
M. Gerbolés, Ctr. Nacional de Microelectrónica (Spain)


Published in SPIE Proceedings Vol. 9423:
Alternative Lithographic Technologies VII
Douglas J. Resnick; Christopher Bencher, Editor(s)

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